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| 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 8 32 40 312 8 4 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit 2 C/W C/W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 1 2005-01-26 2SK3561 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 8 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min Typ. Max Unit 30 500 2.0 0.75 6.5 1050 10 110 26 45 38 130 28 16 12 10 100 A V A V V 4.0 0.85 3.0 S Yfs Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz pF 10 V VGS 0V 50 ID = 4 A VOUT ns RL = 50 VDD 200 V - nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 8 32 Unit A A V ns IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V, dIDR/dt = 100 A/s 1200 10 -1.7 C Marking K3561 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-26 2SK3561 ID - VDS 10 COMMON SOURCE Tc = 25C PULSE TEST 20 1015 6 5.25 1015 ID - VDS 6 COMMON SOURCE Tc = 25C PULSE TEST 5.5 12 5 8 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 8 5 16 6 4.75 4 4.5 4.25 2 VGS = 4 V 4 4.5 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS VDS - VGS VDS (V) 20 COMMON SOURCE 10 COMMON SOURCE Tc = 25 8 PULSE TEST DRAIN CURRENT ID (A) 16 VDS = 20 V PULSE TEST DRAIN-SOURCE VOLTAGE 12 6 ID = 8 A 8 Tc = -55C 4 100 25 4 4 2 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S) 100 10 RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) () COMMON SOURCE Tc = 25C PULSE TEST 10 Tc = -55C Tc = -55C 25 100 25 100 1 VGS = 10 V15V 1 COMMON SOURCE VDS = 10 V PULSE TEST 0.1 0.1 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2005-01-26 2SK3561 RDS (ON) - Tc 2.0 100 IDR - VDS DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE 1.6 VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25C PULSE TEST 10 1.2 ID = 8 A 4 0.8 2 1 10 5 3 1 -0.2 -0.4 -0.6 VGS = 0, -1 V -0.8 -1.0 -1.2 0.4 0 -80 -40 0 40 80 120 160 0.1 0 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE - VDS 10000 5 Vth - Tc (pF) Ciss 1000 GATE THRESHOLD VOLTAGE Vth (V) 4 CAPACITANCE C Coss 100 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA 0 -80 PULSE TEST -40 0 40 80 120 160 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 Crss 100 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS (V) 400 VDS VDD = 100 V 400 16 40 DRAIN-SOURCE VOLTAGE 300 200 200 VGS 100 COMMON SOURCE ID = 8 A Tc = 25C PULSE TEST 0 0 10 20 30 40 12 8 20 4 0 0 40 80 120 160 0 50 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2005-01-26 GATE-SOURCE VOLTAGE VGS (V) 60 500 20 DRAIN POWER DISSIPATION PD (W) 2SK3561 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 3.125C/W 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSED) * 500 EAS - Tch DRAIN CURRENT ID (A) 10 ID max (CONTINUOUS) * 1 ms * AVALANCHE ENERGY EAS (mJ) 100 s * 400 300 200 1 DC OPERATION Tc = 25C 100 SINGLE NONREPETITIVE PULSE 0.1 CURVES LINEARLY Tc=25 MUST WITH BE DERATED IN 0 25 50 75 100 125 150 INCREASE TEMPERATURE. CHANNEL TEMPERATURE (INITIAL) Tch (C) VDSS max 100 1000 0.01 1 10 DRAIN-SOURCE VOLTAGE VDS (V) 15 V BVDSS IAR VDD VDS -15 V TEST CIRCUIT RG = 25 VDD = 90 V, L = 8.3mH WAVE FORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2005-01-26 |
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